National Institute of Lasers and Optronics

Spectroscopy Division

Material Division

Optronics Division

Agriculture and Biophotonics Division

Laser Development Division

Technical Services Division

Epitaxial and Low dimensional Nanomaterials Group

Molecular Beam Epitaxy is a physical vapor deposition (PVD) technique for epitaxial growth of films by the interaction of molecular or atomic beams at the surface of a heated crystalline substrate under Ultra-High vacuum (UHV). Our group uses plasma-assisted molecular beam epitaxy to grow III-Nitride based light emitting diode (LED) and laser diode (LD) structures.


  • Plasma-Assisted Molecular Beam Epitaxy (MBE) System.
  • In-situ Reflection High Energy Electron Diffraction (RHEED) and Spectroscopic Ellipsometer.

Recent activities

  • Epitaxial growth of Gallium Nitride (GaN) on sapphire substrates by MBE.
  • Development of Carbon activated Al2O3 radiation sensors.